Effect of temperature and illumination on the instability of a-Si:H thin-film transistors under AC gate bias stress

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 A, 2001, Pages

  Huang, C Y ^a   Teng, T H ^a   Yang, C J ^a   Tseng, C H ^a   Cheng, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A Si:H TFTs; AC; Bias illumination stress; Bias temperature stress

Indexed keywords

CAPACITANCE; ELECTRONS; GATES (TRANSISTOR); LIQUID CRYSTAL DISPLAYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRESS ANALYSIS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

BIAS-ILLUMINATION-STRESS (BIS); BIAS-TEMPERATURE-STRESS (BTS);

THIN FILM TRANSISTORS;

EID: 0035301672     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l316     Document Type: Article

References (17)