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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 3000-3002

Back-gated point contact

(4) Hashimoto, Katsushi a,b Miyashita, Sen c Saku, Tadashi a Hirayama, Yoshiro a,b

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NTT Advanced Technology Corporation (Japan)

Author keywords

0.7 G0 anomaly; Back gate; Point contact; Quantized conductance; Undoped GaAs AlGaAs single heterostructure

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES;

UNDOPED HETEROSTRUCTURES;

POINT CONTACTS;

EID: 0035300786 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.3000 Document Type: Article

Times cited : (19)

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