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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2881-2886

Advanced Co salicide technology for sub-0.20 μm Fully-depleted SOI devices

(2) Ichimori, T a Hirashita, N a

a OKI ELECTRIC INDUSTRY CO (Japan)

Author keywords

BOX breakdown; BOX yield; Co salicide; Contact hole etching; FD SOI; Pinhole; Silicide surface; SIMOX; TEM

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ETCHING; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

CONTROL-HOLE-ETCHING; FULLY-DEPLETED SILICON-ON-INSULATOR (FD SOI) DEVICES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035300627 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2881 Document Type: Article

Times cited : (6)

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