Electrical detection and simulation of stress in silicon nitride spacer technology

Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 339-341

  Van Zeijl, H W ^a   Mijalcovic, S ^a   Nanver, L K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC INSULATORS; ELECTRIC LINES; FINITE ELEMENT METHOD; METALLIZING; NUMERICAL ANALYSIS; PRESSURE EFFECTS; SILICA; STOICHIOMETRY; THERMAL STRESS;

ELECTRICAL DETECTION; SILICON NITRIDE SPACER TECHNOLOGY; TRANSISTOR ARRAYS;

SILICON NITRIDE;

EID: 0035300169     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1011200612808     Document Type: Article

References (4)