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Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 259-262

Raman active E2 modes in aluminum nitride films

(6) Oliveira, I C a Otani, C a Maciel, H S a Massi, M a Noda, L K b Temperini, M L A b

a INSTITUTO TECNOLÓGICO DE AERONÁUTICA (Brazil)

b UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MAGNETRON SPUTTERING; MOLECULAR VIBRATIONS; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ION ASSISTED DEPOSITION; ION BEAM SPUTTERING;

ALUMINUM NITRIDE;

EID: 0035300167 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1011267505539 Document Type: Article

Times cited : (14)

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