Comparison of temperature dependence in C-band and L-band EDFAs

Journal of Lightwave Technology

Volumn 19, Issue 4, 2001, Pages 527-535

  Flood, Felton A ^a,b  

^a Corning Inc ^*  (United States)

^b Centerpoint Broadband Technologies Inc   (United States)

Author keywords

Erbium; Optical amplifiers

Indexed keywords

BANDWIDTH; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ERBIUM; LIGHT AMPLIFIERS; NATURAL FREQUENCIES; SIGNAL TO NOISE RATIO; SPONTANEOUS EMISSION;

AMPLIFIED SPONTANEOUS EMISSION; ERBIUM-DOPED FIBER AMPLIFIERS; STARK EFFECT;

FIBER LASERS;

EID: 0035300097     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.920851     Document Type: Article

References (10)

1. Temperature dependent gain and noise characterization of a 1480 nm pumped erbium-doped fiber amplifier
2. 3+-doped optical fiber amplifiers
3. Thermal properties of an erbium-doped fiber amplifier
4. Temperature dependent distortion of multi-channel gain flatness for silica and ZBLAN-based erbium amplifiers
5. Temperature dependence of the gain in erbium doped fibers
6. Simple modeling approach for the temperature dependence of the gain of erbium doped fiber amplifiers
7. 3+-doped fiber optical amplifiers
8. Pump wavelength dependent spectral hole burning in EDFA's
9. Ultra low noise long-wavelength EDFA with 3.6 dB external noise figure