Metal-semiconductor transitions under uniaxial stress for single- and double-walled carbon nanotubes

Journal of Physics and Chemistry of Solids

Volumn 62, Issue 3, 2001, Pages 439-444

  Charlier, A ^a   McRae, E ^b   Heyd, R ^a   Charlier, M F ^a  

^a Laboratoire de Physique du Solide   (France)

^b INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; SEMICONDUCTOR MATERIALS; STRENGTH OF MATERIALS; STRESS ANALYSIS;

DOUBLE WALL CARBON NANOTUBES; SMALL WALL CARBON NANOTUBES;

NANOTUBES;

EID: 0035284233     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(00)00074-3     Document Type: Article

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