Topographic and etching investigations on melt grown doped KMgF3 crystals

Materials Chemistry and Physics

Volumn 69, Issue 1-3, 2001, Pages 99-112

  Lal, Banwari ^a   Bamzai, K K ^a   Kotru, P N ^a  

^a UNIVERSITY OF JAMMU   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ETCHING; GRAIN BOUNDARIES; GRAPH THEORY; NICKEL COMPOUNDS; OPTICAL MICROSCOPY; SULFURIC ACID; SURFACE TOPOGRAPHY;

CZOCHRALSKI PULLING TECHNIQUE; POTASSIUM MAGNESIUM FLUORIDE;

POTASSIUM COMPOUNDS;

EID: 0035281705     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00360-6     Document Type: Article

References (39)

1. B.H. Rose, J.E. Rhodes, L.E. Halliburton, BNL-21074, Oklahoma State University, USA.
2. Safa M., Tanner B.K., Garrad B.J., Wanklyn B.M. J. Cryst. Growth. 39:1977;243.
3. J.R. Carruthers, A.F. Witt, R.F. Reusser, in: R. Huff, E. Sirtl (Eds.), Semiconductor Silicon, The Electrochemical Society Softbound Proceedings, Princeton, NJ, 1977, 61 pp.
4. J.R. Carruthers, A.F. Witt, in: R. Ueda, J.B. Mullin (Eds.), Crystal Growth and Characterisation, North-Holland, Amsterdam, 1975, 107 pp.
5. Bontick W. Phil. Mag. 2:1954;848.
6. S.A. Amelinkx, The direct observation of dislocations, Solid State Physics, Suppl. 6, Academic Press, New York, 1964.
7. Raina U., Bhat S., Licci F., Kotru P.N. J. Mat. Sci. 31:1996;3035.
8. Sharma K.K., Kotru P.N., Wanklyn B.M. Mat. Chem. Phys. 36:1993;100.
9. Bamzai K., Kotru P.N., Wanklyn B.M. Appl. Surf. Sci. 68:1993;505.
10. Bamzai K.K., Dhar P.R., Kotru P.N., Wanklyn B.M. Mat. Chem. Phys. 62:2000;214.
11. G. Milazzo, Electrochemistry, Elsevier, New York, 1963, 496 pp.
12. B. Baker, D.C. Koehler, W.O. Fiechenstein, C.E. Roden, R. Sabia, Materials Technology, vol. 2, Prentice-Hall, Englewood, NJ, 1970, 217 pp.
13. Kotru P.N., Razdan A.K., Raina K.K., Wanklyn B.M. J. Mat. Sci. 20:1985;3365.
14. F. Rosenberg, Fundamentals of Crystal Growth I, Springer, Berlin, 1979.
15. E. Bauser, Max-Plank Institute Festkorperforschung, Sttutgart 80, Federal Republic of Germany XIII, 1983.
16. T. Abe, K. Kikuchi, S. Shirai, S. Muraoka, in: R. Huff, R.J. Kriegler, Y. Takeishi (Eds.), Semiconductor Silicon, Pennigton, NJ, 1981, 55 pp.
17. J.W. Faust, Jr., in: Silicon Carbide, Pergamon Press, London, 1960, 403 pp.
18. Patel A.R., Mathai K.J. Ind. J. Pure Appl. Phys. 7:1969;486.
19. K. Sangwal, Etching of Crystals, Theory, Experiments and Application, vol. 15 of Defects in Solids, North-Holland, Amsterdam, 1987.
20. A.P. Honess, The Nature, Origin and Interpretation of the etch figures and Crystals, Wiley, New York, 1927.
21. Sangwal K., Urusovskaya A.A. J. Cryst. Growth. 41:1977;216.
22. Patel A.R., Desai C.C. Z. Kristallogr. 121:1965;55.
23. Patel A.R., Desai C.C. Z. Kristallogr. 121:1965;431.
24. Sangwal K. Kristallographia. 20:1975;116.
25. Sangwal K., Desai C.C., John V. Krist. Tech. 14:1979;63.
26. Patel A.R., Singh R.P. Jpn. J. Appl. Phys. 6:1967;938.
27. Patel A.R., Singh R.P. J. Cryst. Growth. 2:1968;373.
28. Sangwal K., Sutaria J.N. J. Mat. Sci. 11:1976;2271.
29. Borecka B., Sangwal K. J. Mat. Sci. Lett. 1:1982;364.
30. Joshi M.S., Ittyachen M.A. Phil. Mag. 16:1967;717.
31. Ives M.B. J. Phys. Chem. Solids. 24:1967;275.
32. Progress in Ceramics Science, vol. 2, Pergamon Press, Oxford, 1962.
33. Joshi M.S., Kotru P.N. Ind. J. Pure Appl. Phys. 5:1967;565.
34. Cabrera N. J. Chem. Phys. 53:1956;675.
35. N. Cabrera, On the role of dislocations in the reactivity of solids, in: H.C. Gatos (Ed.), The Surface Chemistry of Metals and Semiconductor, Wiley, New York, 1960, 71 pp.
36. Schaarwachter W. Phys. Status Solidi. 12:1965;565.
37. Gilman J.J., Johnston W.G., Sears G.W. J. Appl. Phys. 29:1955;747.
38. Burton W.K., Cabrera N., Frank F.C. Phil. Trans. R. Soc. London. 243:1951;299.
39. K. Sangwal, Etching of Crystals, Theory, Experiments and Application, vol. 15 of Defects in Solids, North-Holland, Amsterdam, 1957, 135 pp.