Monitoring of carrier lifetime in GaAs substrate-epi-layer structures by space-resolved transient microwave absorption

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 460, Issue 1, 2001, Pages 35-40

  Gaubas, E ^a   Vaitkus, J ^a   Smith, K M ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; MICROWAVES; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER LIFETIME;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035278340     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)01092-5     Document Type: Article

References (5)

1. Gaubas E., Vanhellemont J. J. Appl. Phys. 80(11):1996;6293.
2. Gaubas E., Kaniava A., Vaitkus J. Semicond. Sci. Technol. 12:1997;1-10.
3. A. Poyai, E. Simoen, C. Claeys, E. Gaubas, A. Czerwinski, Abstr.'98 General Scientific Meeting, Belgian Phys. Soc., 19-20 May, 1998, BNV-BPS.
4. Vaitkus J., Gaubas E., Kazukauskas V., Rinkevicius V., Storasta J., Tomasiunas R., Smith K.M. V. O'Shea. Nucl. Instr. and Meth. A. 434:1999;61-66.
5. A.R. Peaker, Datareview 10.4 and 10.5, in: M.R. Brozel, G.E. Stillman (Eds.), Properties of GaAs. Inspect, 1996.