Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 427-430

  Wen, T C ^a   Lee, W I ^a   Sheu, J K ^b   Chi, G C ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Carrier concentration; Hall measurement; In mole fraction; Mg doped InxGa1 xN; Mobility; Photoluminescence

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; DEGRADATION; DISSOCIATION; HALL EFFECT; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

MOLE FRACTIONS; POST-ANNEALING PROCESS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035278088     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00044-2     Document Type: Article

References (8)