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Volumn 21, Issue 3, 2001, Pages 297-302
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Effect of nitrogen pressure and oxygen-containing impurities on self-propagating high temperature synthesis of Si3N4
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Author keywords
Aspect ratio; SHS; Si; Si3N4; VLS
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL IMPURITIES;
HIGH TEMPERATURE OPERATIONS;
NITROGEN;
OXYGEN;
PRESSURE EFFECTS;
REACTION KINETICS;
SYNTHESIS (CHEMICAL);
SELF-PROPAGATING REACTIONS;
SILICON NITRIDE;
SYNTHESIS;
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EID: 0035277581
PISSN: 09552219
EISSN: None
Source Type: Journal
DOI: 10.1016/S0955-2219(00)00189-8 Document Type: Article |
Times cited : (26)
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References (7)
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