Effect of nitrogen pressure and oxygen-containing impurities on self-propagating high temperature synthesis of Si3N4

Journal of the European Ceramic Society

Volumn 21, Issue 3, 2001, Pages 297-302

  Wang, Huabin ^a   Han, Jie Cai ^a   Du, Shanyi ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Aspect ratio; SHS; Si; Si3N4; VLS

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; HIGH TEMPERATURE OPERATIONS; NITROGEN; OXYGEN; PRESSURE EFFECTS; REACTION KINETICS; SYNTHESIS (CHEMICAL);

SELF-PROPAGATING REACTIONS;

SILICON NITRIDE;

SYNTHESIS;

EID: 0035277581     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(00)00189-8     Document Type: Article

References (7)

1. Review: Reaction-bonded silicon nitride: Its formation properties
2. Self-propagating high-temperature synthesis: Twenty years of search and findings [C]
3. New progress in advance in application of SHS. Sinica
4. Microstructural peculiarities of silicon nitride formed by SHS under high nitrogen pressure
5. Effect of nitrogen pressure on afterburning of SHS AIN
6. Effect of additives on SHS AIN