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Volumn 21, Issue 3, 2001, Pages 297-302

Effect of nitrogen pressure and oxygen-containing impurities on self-propagating high temperature synthesis of Si3N4

Author keywords

Aspect ratio; SHS; Si; Si3N4; VLS

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; HIGH TEMPERATURE OPERATIONS; NITROGEN; OXYGEN; PRESSURE EFFECTS; REACTION KINETICS; SYNTHESIS (CHEMICAL);

EID: 0035277581     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(00)00189-8     Document Type: Article
Times cited : (26)

References (7)
  • 1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.