Room temperature simulation of a novel quantum wire transistor

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 519-523

  Haque, A ^a   Quddus, M R ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

Electron phonon scattering; Field effect transistor; Nonequilibrium transport; Quantum wires

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON SCATTERING; GREEN'S FUNCTION; PHONONS; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WIRES; TRANSCONDUCTANCE;

INELASTIC ELECTRON-PHONON SCATTERING; QUANTUM MECHANICAL INTERFERENCE EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 0035276825     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00030-2     Document Type: Article

References (15)

1. Low-temperature transport characteristics of AlGaAs-GaAs in-plane-gated wires
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7. 3D-simulation of novel quantum wire transistors
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13. On the conductance and conductivity of disordered quantum wires
14. Random impurity and phonon scattering processes in mesoscopic devices