Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 337-343

  Chen, M ^a   Chen, J ^a   Zheng, W ^a   Li, L ^a   Mu, H C ^a   Lin, Z X ^a   Yu, Y H ^a   Wang, X ^a   Wang, G Y ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); ETCHING; INTERFACES (MATERIALS); ION IMPLANTATION; LSI CIRCUITS; OXYGEN; REACTION KINETICS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDE; IMPLANTATION ENERGY; OXYGEN WAFERS; SECCO ETCHING; THREADING DISLOCATION DENSITY;

SILICON WAFERS;

EID: 0035271390     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1358853     Document Type: Article

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