Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1214-1217

  Dong Joon Kim, ^a   Hyun Sang Sim, ^a   Lee, S ^a   Kim, Y T ^a   Kim, S I ^a   Park, J W ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

Diffusion barrier; SiOF; Stress relaxation; Surface energy; W N

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACIAL ENERGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STRESS RELAXATION; SURFACE ROUGHNESS;

MULTILEVEL INTERCONNECT TECHNOLOGY;

THIN FILMS;

EID: 0035271302     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1214     Document Type: Article

References (10)