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Volumn 10, Issue 3-7, 2001, Pages 463-468
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C+-damaged diamond: Electrical measurements after rapid themal annealing to 500°C
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Author keywords
Diamond; Graphitisation; Ion implantation; Radiation damage
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Indexed keywords
COMPUTER SIMULATION;
COMPUTER SOFTWARE;
ELECTRICAL ENGINEERING;
ION IMPLANTATION;
NITROGEN;
RAPID THERMAL ANNEALING;
ELECTRICAL MEASUREMENTS;
DIAMONDS;
DIAMOND;
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EID: 0035271162
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(00)00538-0 Document Type: Article |
Times cited : (12)
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References (17)
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