A highly-efficient tungsten-polycide gate radio-frequency power metal-oxide-semiconductor field-effect-transistor using bonded silicon-on-insulator technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1162-1166

  Matsumoto, S ^a   Hiraoka, Y ^a   Sakai, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Power MOSFET; Power added efficiency; RF power amplifier; SOI

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; SILICON ON INSULATOR TECHNOLOGY; THIN FILM TRANSISTORS;

POWER-ADDED EFFICIENCY;

MOSFET DEVICES;

EID: 0035270439     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1162     Document Type: Article

References (8)