Scintillation characteristics and radiation damage of Ce-Doped Bi4Si3O12 single crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1360-1366

  Harada, Kenji ^a   Ishii, Mitsuru ^a   Senguttuvan, Nachimuthu ^a   Kobayashi, Masaaki ^b   Nikl, Martin ^c   Feng, Xi Qi ^d  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^c INSTITUTE OF PHYSICS   (Czech Republic)

^d SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Bi4Si3O12:Ce; Decay constant; Light yield; Radiation hardness; Scintillator

Indexed keywords

BISMUTH COMPOUNDS; CERIUM; CRYSTAL GROWTH; IRRADIATION; OPACITY; RADIATION DAMAGE; RADIATION HARDENING; SCINTILLATION; SEMICONDUCTOR DOPING;

DECAY CONSTANT; OPTICAL TRANSMITTANCE;

SINGLE CRYSTALS;

EID: 0035269842     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1360     Document Type: Article

References (18)