메뉴 건너뛰기




Volumn 11, Issue 1 III, 2001, Pages 3848-3851

Production of double-sided large-area high-Tc wafers by molecular beam epitaxy

Author keywords

High temperature superconductors; Microwave communication; Molecular beam epitaxy

Indexed keywords

DEPOSITION; FILM GROWTH; MAGNESIA; MOLECULAR BEAM EPITAXY; SUBSTRATES; THERMAL EFFECTS;

EID: 0035268043     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.919904     Document Type: Conference Paper
Times cited : (18)

References (15)
  • 14
    • 4243908105 scopus 로고    scopus 로고
    • The growth temperature was measured by an infrared pyrometer focused on the stainless steel plate for single-sided wafer preparation


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.