Analysis of Nanostructure Formation Using Photon/Electron Spectroscopies: Cu on SiC Substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1927-1928

  Zhenlian, A N ^a   Hirai, Masaaki ^a   Kusaka, Masahiko ^a   Saitoh, Taeko ^a   Iwami, Motohiro ^a  

^a OKAYAMA UNIVERSITY   (Japan)

Author keywords

AES; Cu; LEED; Nanostructure; SiC; X ray emission analysis

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; DEPOSITION; EMISSION SPECTROSCOPY; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE; SUBSTRATES; X RAY SPECTROSCOPY;

SOFT X RAY EMISSION SPECTROSCOPY (SXES);

NANOSTRUCTURED MATERIALS;

EID: 0035267626     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1927     Document Type: Article

References (4)

1. J. A. Freitas, Jr.: Properties of Silicon Carbide, ed. G. L. Harris (INSPEC, the Institution of Electrical Engineers, London, 1995) p. 29.
2. M. Iwami, M. Hirai, M. Kusaka, M. Kubota, S. Yamamoto, H. Nakamura, H. Watabe, M. Kawai and H. Soezima: Jpn. J. Appl. Phys. 29 (1990) 1353.
3. M. Iwami: Appl. Surf. Sci. 113/114 (1997) 377.
4. H. Soezima: Surf. Sci. 85 (1979) 610.