Properties and reactive sputtering parameters of GeN film for high-density phase-change optical disk

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1581-1584

  Miao, X S ^a   Chong, T C ^a   Shi, L P ^a   Tan, P K ^a   Li, J M ^a   Lim, K G ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

Author keywords

GeN film; Optical data storage; Overwriting cycles; Sputtering parameters; Sulfur atom diffusion

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; FILMS; GERMANIUM COMPOUNDS; OPTIMIZATION; PHASE EQUILIBRIA; RANDOM ACCESS STORAGE; SIMULATION; SPUTTERING; SULFUR; THERMODYNAMIC PROPERTIES; VIDEODISKS;

DIGITAL VERSATILE DISK-RANDOM ACCESS MEMORY (DVD-RAM);

OPTICAL DISK STORAGE;

EID: 0035267553     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1581     Document Type: Article

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