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Volumn 40, Issue 3 B, 2001, Pages 2084-2086
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Optical study of strain-induced GaAs quantum dots
a a b c a a
c
NEC CORPORATION
(Japan)
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Author keywords
GaAs; Nonlinear luminescence; Photoluminescence; Photoluminescence excitation spectrum; State filling effect; Strain induced quantum dots
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Indexed keywords
ELECTRON ENERGY LEVELS;
OPTICAL TESTING;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
STRAIN INDUCED QUANTUM DOTS (SIQD);
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0035267487
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.2084 Document Type: Article |
Times cited : (5)
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References (13)
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