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Volumn 40, Issue 3 B, 2001, Pages 2084-2086

Optical study of strain-induced GaAs quantum dots

Author keywords

GaAs; Nonlinear luminescence; Photoluminescence; Photoluminescence excitation spectrum; State filling effect; Strain induced quantum dots

Indexed keywords

ELECTRON ENERGY LEVELS; OPTICAL TESTING; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035267487     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2084     Document Type: Article
Times cited : (5)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.