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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1947-1950

Breakdown of the phonon bottleneck effect in self-assembled quantum dots

(8) Masumoto, Yasuaki a Ignatiev, Ivan V b Kozin, Igol E a Davydov, Valentin G b Nair, Selvakumar V b Ren, Hong Wen c Lee, Jeong Sik a Sugou, Shigeo d

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c ST PETERSBURG STATE UNIVERSITY (Russian Federation)

d NEC CORPORATION (Japan)

Author keywords

Auger process; Inp; Phonon bottleneck effect; Relaxation; Self assembled quantum dot; Site selective excitation

Indexed keywords

ELECTRIC FIELD EFFECTS; LOW TEMPERATURE EFFECTS; PHONONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTRUM ANALYSIS;

PHONON BOTTLENECK EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035267371 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.1947 Document Type: Article

Times cited : (6)

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