Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 242-248

  Nishiyama, Nobuhiko ^b   Arai, Masakazu ^a,b   Shinada, Satoshi ^a,b   Azuchi, Munechika ^b   Miyamoto, Tomoyuki ^b   Koyama, Fumio ^a,b   Iga, Kenichi ^a,b  

^a IEEE

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaAs (311)B substrates; GaInAs; Quantum wells; Surface emitting lasers

Indexed keywords

ANISOTROPY; CURRENT DENSITY; LIGHT EMISSION; LIGHT POLARIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TEMPERATURE;

GALLIUM INDIUM ARSENIDE; OPTICAL ANISOTROPY; VERTICAL CAVITY SURFACE EMITTING LASER;

QUANTUM WELL LASERS;

EID: 0035263978     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.954136     Document Type: Article

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