Characteristics of GaAs-based concentrator cells

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 559-565

  Araki, Kenji ^a   Yamaguchi, Masafumi ^a   Takamoto, Tatsuya ^b   Ikeda, Eiji ^b   Agui, Takaaki ^b   Kurita, Hiroshi ^b   Takahashi, Ken ^c   Unno, Tsunehiro ^c  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b JAPAN ENERGY CORPORATION   (Japan)

^c HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SOLAR CONCENTRATORS; SUBSTRATES;

SINGLE JUNCTION CELLS; TWO-JUNCTION CELLS;

SOLAR CELLS;

EID: 0035254053     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00238-5     Document Type: Article

References (3)

1. G. Stryi-Hipp et al., Precision spectral response and I-V characterization of concentrator cells, IEEE Photovoltaic Specialists Conference, 1993, pp. 303-308.
2. A.G. Aberle et al., A new method for accurate measurement of the lumped series resistance of solar cells", IEEE Photovoltaic Specialists Conference, 1993, pp. 133-139.
3. Kenji Araki et al., A Si concentrator cell by single photolithography process, PVSEC-11. September 1999, to be published.