Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 179-185

  Nishimoto, Tomonori ^a   Takagi, Tomoko ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; AMORPHOUS FILMS; DEPOSITION; FILM GROWTH; HALOGEN COMPOUNDS; HYDROGENATION; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS;

FLUORINATED FILMS; HALOGEN ADDITIVES; HYDROGENATED AMORPHOUS SILICON; LIGHT SOAKING;

AMORPHOUS SILICON;

EID: 0035253969     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00171-9     Document Type: Article

References (5)

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2. R. Hayashi, T. Takagi, G. Ganguly, M. Fukawa, M. Kondo, A. Matsuda, New diagnostics of the responsible species for degradation of high growth rate a-Si : H, Proceedings of the Second WCPEC, 1998, p. 929.
3. Oshima T., Tamaguchi K., Yamada A., Konagai M., Takahashi K. Mater. Res. Soc. Symp. 336:1994;91.
4. Nakata M., Wagner S. J. Non-Cryst. Solids. 198-200:1996;999.
5. Langford A.A., Mahan A.H., Fleet M.L., Bender J. Phys. Rev. B. 41:1990;8359.