RF ion source for low energy ion implantation - beam profile control of a large-area ion source using 500-MHz discharge

Surface and Coatings Technology

Volumn 136, Issue 1-3, 2001, Pages 281-284

  Tanjyo, Masayasu ^a   Sakai, Shigeki ^a   Takahashi, Masato ^a  

^a NISSIN ION EQUIPMENT CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ION IMPLANTATION; ION SOURCES; SEMICONDUCTOR PLASMAS; SILICON WAFERS;

LARGE AREA ION SOURCES;

ULSI CIRCUITS;

EID: 0035253932     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)01032-X     Document Type: Article

References (7)

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3. M. Tanjyo, Serial Ion Implantation Technology for Deep Submicron Devices, (1998) (Text for SEMICON Kansai 98 ULSI Technology Seminar, SEAJ, Tokyo).
4. S. Sakai, M. Takahashi, M. Tanjyo, Mater. Chem. Phys. 54 (1998) 44-48.
5. S. Sakai, M. Takahashi, M. Tanjyo, Proceedings of the Seventh Workshop on Beam Engineering Advanced Material Syntheses, BEAMS 1998, Ionics, Tokyo, (1998) 27.
6. K.S. Yee, Numerical solution of initial boundary value problems involving Maxwell's equation in isotopic media, IEEE Trans. Antennas Propag. AP-14 (1966) 302-307.
7. T. Kotera, Program for the Electromagnetic-Wave Propagation by FDTD method, Transistor Technology, CQ-print, Tokyo, 1997.