Two-dimensional simulation of ferroelectric memory cells

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 316-322

  Dragosits, Klaus ^a   Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; FERROELECTRIC MATERIALS; INTEGRATED CIRCUIT LAYOUT; MAGNETIC HYSTERESIS; MATHEMATICAL MODELS; POLARIZATION;

FERROELECTRIC MEMORY CELLS;

NONVOLATILE STORAGE;

EID: 0035250299     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902733     Document Type: Article

References (6)

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4. B. Jiang et al., Computationally efficient ferroelectric capacitor model for circuit simulation in IEEE Symp. VLSI Technology Dig. Tech. Papers, 1997, pp. 141-142.
5. C. FischerBauelementsimulation in einer computergestützten Entwurfsumgebung Ph.D. dissertation, Tech. Univ. Wien, Austria, 1994.
6. I. D. Mayergoyz, Mathematical Models of Hysteresis. Berlin, Germany: Springer Verlag, 1991.