Empirical modeling of LF gate noise in GaAs DCFET in impact ionization regime

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 50-52

  Lambert, Benoît ^a   Malbert, Nathalie ^a   Labat, Nathalie ^a   Verdier, Frédéric ^a   Touboul, André ^a  

^a UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; IMPACT IONIZATION; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

DOPING CHANNEL FIELD EFFECT TRANSISTORS (DCFET);

GATES (TRANSISTOR);

EID: 0035249890     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902828     Document Type: Article

References (8)

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