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Volumn 148, Issue 1, 2001, Pages 40-44

Electrothermal model of GaAs FET devices for fast PC implementation

Author keywords

[No Author keywords available]

Indexed keywords

FINITE DIFFERENCE METHOD; HEAT RESISTANCE; PERSONAL COMPUTERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

EID: 0035247201     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20010173     Document Type: Article
Times cited : (5)

References (17)
  • 16
    • 0029345471 scopus 로고
    • On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal conductivity
    • (1995) Solid-State Electron. , vol.38 , Issue.7 , pp. 1409-1412
    • Bonani, F.1    Ghione, G.2
  • 17
    • 3643134093 scopus 로고
    • Thermal conductivity of GaAs
    • 'Properties of gallium arsenide' (EMIS Datarev. Ser., INSPEC, IEE)
    • (1990) , pp. 21-23
    • Brice, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.