Numerical analysis to improve the stabilized-efficiency of amorphous silicon solar cells with new device structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 486-491

  Dairiki, K ^a   Yamada, A ^a   Konagai, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Acceptor states; Amorphous silicon; Computer simulation; SiH2Cl2 addition; Solar cell

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; COMPUTER SIMULATION; DEFECTS; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); NUMERICAL ANALYSIS; POISSON EQUATION; QUANTUM EFFICIENCY;

ABSORBER-LAYER; ACCEPTOR STATES; SCHARFETTER AND GUMMEL SOLUTION;

SILICON SOLAR CELLS;

EID: 0035246293     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.486     Document Type: Article

References (8)