Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/Al0.3Ga0.7As double wells measured as a function of the in-plane magnetic field

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 12, Issue 1-4, 2002, Pages 315-318

  Svoboda, P ^a   Krupko, Y ^a   Smrcka L ^a   Cukr, M ^a   Jungwirth, T ^a,b   Jansen, L ^c  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

Author keywords

Double layer two dimensional electron system; Magnetotransport

Indexed keywords

CHARGE TRANSFER; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; HETEROJUNCTIONS; MAGNETORESISTANCE; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

MAGNETOTRANSPORT PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035239506     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00354-X     Document Type: Conference Paper

References (5)