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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 12, Issue 1-4, 2002, Pages 462-465

The acoustoelectric effect in double layer AlGaAs/GaAs 2D hole systems

(7) Dunford, R B a Gates, M R a Mellor, C J a Rampton, V W a Chauhan, J S a Middleton, J R a Henini, M a

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

Acoustoelectric effect; Double layer hole systems; Quantum Hall effect; Surface acoustic wave

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; HALL EFFECT; HOLE MOBILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

DOUBLE LAYER HOLE SYSTEMS; SURFACE ACOUSTIC WAVES;

ACOUSTOELECTRIC EFFECTS;

EID: 0035239487 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(01)00333-2 Document Type: Conference Paper

Times cited : (4)

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