The lever-arm model: Describing resonant tunneling under bias at a fractional quantum Hall edge

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 12, Issue 1-4, 2002, Pages 80-83

  Grayson, M ^a,b   Tsui, D C ^b   Pfeiffer, L N ^c   West, K W ^c   Chang, A M ^c,d  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b Princeton University   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d PURDUE UNIVERSITY   (United States)

Author keywords

Fractional quantum Hall effect; Resonant tunneling

Indexed keywords

CRYOSTATS; ELECTRON RESONANCE; ELECTRONIC DENSITY OF STATES; HALL EFFECT; MAGNETIC FIELD EFFECTS; QUANTUM THEORY; SEMICONDUCTOR DOPING;

FRACTIONAL QUANTUM HALL EFFECTS (FQHE);

RESONANT TUNNELING;

EID: 0035239430     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00247-8     Document Type: Conference Paper

References (12)