In situ monitoring of the deposition of a-Si:H/c-Si heterojunctions by transient photoconductivity measurements

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 417-422

  Von Aichberger, S ^a   Feist, H ^a   Loffler J ^a   Kunst, M ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; GLOW DISCHARGES; INTERFACES (MATERIALS); PASSIVATION; PHOTOCONDUCTIVITY; SOLAR CELLS;

IN SITU MONITORING; TRANSIENT PHOTOCONDUCTIVITY MEASUREMENT;

HETEROJUNCTIONS;

EID: 0035204996     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00121-5     Document Type: Article

References (3)

1. Matsumoto Y., Hirata G., Takakura H., Okamoto H., Hamakawa Y. J. Appl. Phys. 67:1990;6538.
2. Neitzert H.-C. M. Kunst J. Vac. Soc. Technol. A13:1995;2753.
3. Swiatkowski C., Sanders A., Buhre K.-D. M. Kunst J. Appl. Phys. 78:1995;1763.