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Volumn 65, Issue 1, 2001, Pages 297-301

UVCVD silicon nitride passivation and ARC layers for multicrystalline solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LOW TEMPERATURE OPERATIONS; OPTICAL PROPERTIES; PASSIVATION; PHOTOCHEMICAL REACTIONS; SILICON NITRIDE;

EID: 0035202560     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00105-7     Document Type: Article
Times cited : (8)

References (7)
  • 1
    • 0008473319 scopus 로고    scopus 로고
    • Investigation of hydrogen diffusion, effusion and passivation in solar cells using different multicrystalline silicon base materials
    • Vienna
    • M. Spiegel, G. Hahn, Investigation of hydrogen diffusion, effusion and passivation in solar cells using different multicrystalline silicon base materials, Proceedings of the Second World Conference on PVESC, Vienna, 1998.
    • (1998) Proceedings of the Second World Conference on PVESC
    • Spiegel, M.1    Hahn, G.2
  • 5
    • 0026622215 scopus 로고
    • Hydrogenation of multicrystalline silicon from a backside silicon nitride layer
    • Las Vegas
    • M. Lemiti, J. Gervais, S. Martinuzzi, Hydrogenation of multicrystalline silicon from a backside silicon nitride layer, IEEE Photovoltaic Specialists Conference, Las Vegas, 1991, p. 1002.
    • (1991) IEEE Photovoltaic Specialists Conference , pp. 1002
    • Lemiti, M.1    Gervais, J.2    Martinuzzi, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.