Influence of the surface on charge carrier transport in GaAs films

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 119-124

  Sanders, A ^a   Hahneiser, O ^a   Von Aichberger, S ^a   Kunst, M ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CHARGE CARRIERS; MOLECULAR BEAM EPITAXY; NEODYMIUM LASERS; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING; SOLAR CELLS; SURFACES; THIN FILMS;

OPTOLECTRONIC PROPERTIES; PHOTO VOLTAGE; SURFACE RECOMBINATION; TIME RESOLVED MICROWAVE CONDUCTIVITY METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035199553     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00085-4     Document Type: Article

References (8)

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3. Kunst M., Müller G., Schmidt R., Wetzel H. Appl. Phys. A. 46:1988;77.
4. Ahrenkiel R.K. Coutts T.J., Meakin J.D. Current Topics in Photovoltaics. Vol. 3:1988;1 Academic Press, London.
5. Yablonovitch E., Skromme B.J., Bhat R., Harbison J.P., Gmitter T.J. Appl. Phys. Lett. 54:1989;555.
6. Hahneiser O. Thesis. 1998;Berlin.
7. Spicer W.E., Lindau J., Skeath P., Su C.Y. J. Vac. Sci. Technol. 17:1980;1019.
8. M. Kunst, unpublished measurements.