Statistical analysis of local shunts and their relationship with minority-carrier lifetime in multi-crystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 445-451

  David, Mulati ^a   Matsunami, Hiroyuki ^a   Fuyuki, Takashi ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; DIODES; ELECTRIC CURRENT DISTRIBUTION; ENERGY EFFICIENCY; PERFORMANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; STATISTICAL METHODS; SWITCHING;

LOCAL SHUNTS; MINORITY CARRIER LIFETIME; MULTICRYSTALLINE SILICON SOLAR CELLS; SURFACE RECOMBINATION;

SILICON SOLAR CELLS;

EID: 0035194587     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00125-2     Document Type: Article

References (5)

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5. Sze S.M. Physics of Semiconductor Devices. 2nd Edition:1981;Wiley, New York.