Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 503-508

  Krinke, J ^a   Kuchler, G ^b   Brendel, R ^b   Artmann, H ^c   Frey, W ^c   Oelting, S ^d   Schulz, M ^b   Strunk, H P ^a  

^a Inst Microcharacterization U   (Germany)

^b BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

^c ROBERT BOSCH GMBH   (Germany)

^d ANTEC GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; IONS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

ION ASSISTED DEPOSITION; ROD LIKE DEFECTS;

SILICON;

EID: 0035194491     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00133-1     Document Type: Article

References (6)

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4. S. Oelting, D. Martini, D. Bonnet, Crystalline thin film silicon solar cells by ion-assisted deposition, Proceedings of the 12th E.C. Photovoltaic Specialists Conference, 1994, p. 1815.
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6. T.Y. Tan, Phil. Mag. A 44 (1) (1981) 101.