Photoresist processing for high-resolution DUV lithography at 257 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue 1, 2001, Pages 306-311

  Fuller, Scott ^a   Montgomery, Warren ^a   Albelo, Jeff ^a   Rodrigues, William ^a   Buxbaum, Alex ^a  

^a Applied Materials Inc   (United States)

Author keywords

DUV resist; Environmentally stable; Maskmaking

Indexed keywords

ANTIREFLECTION COATINGS; ENVIRONMENTAL IMPACT; LITHOGRAPHY; MASKS;

CHEMICAL AMPLIFIED RESIST; CRITICAL DIMENSION CONTROL; MASKMAKING; POST APPLY BAKE; POST EXPOSURE BAKE;

PHOTORESISTS;

EID: 0035185076     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.438370     Document Type: Article

References (2)

1. Airborne chemical contamination of a chemically amplified resist
2. Process development for 257 nm photomask fabrication using environmentally stable chemically amplified photoresists