Low-k BCB passivated Al0.5Ga0.5As/In0.15Ga0.85As enhancement-mode pHMETs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 269-272

  Chiu, H C ^a   Yang, S C ^a   Chan, Y J ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; MICROWAVE DEVICES; PASSIVATION; PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BENZOCYCLOBUTENE (BCB);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035161798     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Suppression of I-V kink in doped-channel InAlAs/InGaAs/InP heterostructure field-effect transistor (HFET) using silicon nitride passivation
2. Suppression of gate leakage current in n-AlGaAs/GaAs power HEMTs
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
4. 3 plasma
5. 64% efficiency enhancement-mode power heterojunction FET for 3.5 V Li-ion battery operated personal digital cellular phones
6. Greater than 70% enhancement-mode GaAs HJFET power amplifier MMIC with extremely low leakage current
7. Reduced intermodulation distortion of doped-channel FETs by air-bridge gate process