Evaluating manufacturability of radiation-hardened SOI substrates

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 131-132

  Alles, M ^a   Dolan, B ^a   Hughes, H ^a   McMarr, P ^a   Gouker, P ^a   Liu, M ^a  

^a Ibis Technology Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; LEAKAGE CURRENTS; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICE TESTING; SILICON WAFERS; SUBSTRATES; THRESHOLD VOLTAGE;

BURIED OXIDES (BOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035158883     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. High performance 0.18 um SOI CMOS technology
2. Total dose radiation effects on hardened buried oxide FDSOI NMOS