Structural investigation of the epitaxial yttria-stabilized zirconia films deposited on (0 0 1) silicon by laser ablation

Journal of Crystal Growth

Volumn 222, Issue 3, 2001, Pages 558-564

  Lei, C H ^a,b   Van Tendeloo, G ^a   Siegert, M ^b   Schubert, J ^b   Buchal, Ch ^b  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DEPOSITION; LASER ABLATION; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; YTTRIUM; ZIRCONIA;

PULSED LASER DEPOSITION (PLD);

SEMICONDUCTING FILMS;

EID: 0035156245     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00943-X     Document Type: Article

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