Effect of high temperature sintering schedule for enhanced CMR properties of La0.67Ca0.33MnO3 close to room temperature

Materials Chemistry and Physics

Volumn 67, Issue 1-3, 2001, Pages 267-271

  Roul, B K ^a   Sahu, D R ^a   Mohanty, S ^a   Pradhan, A K ^b  

^a Institute of Materials Science   (India)

^b SUPERCONDUCTIVITY RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSIFICATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN BOUNDARIES; GRAIN GROWTH; HIGH TEMPERATURE EFFECTS; LANTHANUM COMPOUNDS; MAGNETIZATION; MAGNETORESISTANCE; MICROSTRUCTURE; POLARIZATION; SINTERING; TRANSMISSION ELECTRON MICROSCOPY;

COLOSSAL MAGNETORESISTANCE; LANTHANUM CALCIUM MANGANITE;

CERAMIC MATERIALS;

EID: 0035153872     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00449-1     Document Type: Article

References (24)

1. Von Helmolt R., Weeker J., Holzapfel B., Schultz L., Samwer K. Phys. Rev. Lett. 71:1993;2331.
2. Jin, Tiefel T.H., McCormck M., Fastnacht R.A., Ramesh R., Chen L.H. Science. 264:1993;413.
3. Mahesh R., Mahendiran R., Raychaudhuri A.K., Rao C.N.R. J. Solid State Chem. 114:1995;297.
4. Mangam A., Simon Ch., Caignaert V., Raveau B. Z. Phys. B. 99:1996;305.
5. Raveau B., Maignan A., Caignaert V. J. Solid State Chem. 117:1995;424.
6. Ju H.L., Kwon C., Li Q., Greene R.L., Venkatesen T. Appl. Phys. Lett. 65:1994;2108.
7. Gupta A., Gong G.Q., Xiao G., Duncombe P.R., Lecoeur P., Trouilloud P., Wang Y.Y., Dravid V.P., Sun J.Z. Phys. Rev. B. 54:1996;15629.
8. Shreekala R., Rajeswari M., Ghosh K., Goyal A., Gu J.Y., Kwon C., Trajanovic Z., Boettcher T., Grenee R.L., Ramesh R., Venkaesan T. Appl. Phys. Lett. 71:1997;282.
9. Wang X.L., Horvat J., Liu H.K., Dou S.X. J. Solid State Commun. 108:1998;661.
10. de Andres A., Garcia Hermaandez M., Martinez J.L., Prieto C. Appl. Phys. Lett. 73:1998;999.
11. Pignard S., Vincet H., Senateur J.P., Frohlich K., Souc J.I. Appl. Phys. Lett. 73:1998;999.
12. Zhang X.X., Yu R.H., TeJada J., Sun G.F., Xin Y., Wong K.W. Appl. Phys. Lett. 68:1996;3191.
13. Ju H.L., Gopalkrishnan J., Peng J.L., Li Q., Xiong G.C., Venkatesan T., Grenee R.L. Phys. Rev. B. 51:1995;6143.
14. Anil Kumar P.S., Joy P.A., Date S.K. J. Solid State Commun. 108:1998;67.
15. Ogale S.B., Ghosh K., Gu J.Y., Shreekala R., Shinde S.R., Downes M., Rajeswaru M., Sharma R.P., Greene R.L., Venkatesan T., Ramesh R., Bathe R., Patil S.I., Ravikumar R., Arora S.K., Mehta G.K. J. Appl. Phys. 84:1998;6255.
16. Lin Z.W., Cochrane J.W., Russell G.J., Wang X.L., Liu H.K., Dou S.X. Appl. Phys. Lett. 74:1999;3014.
17. Zheng L., Li K., Zhang Y. Phys. Rev. B. 58:1998;8613.
18. de Andres A., Gracia Hernandez M., Martinez J.L., Prieto C. Appl. Phys. Lett. 74:1999;3884.
19. M. Uehara, S. Mori, C.H. Chen, S.W. Cheong, Nature (1999) 560.
20. A. Gupta, IBM T.J. Watson Research Center, York town Heights, NY 10598, USA.
21. P. Lecour, P. Troullioud, G. Xiao, A. Gupta, X.W. Li, G.Q. Gong, J. Appl. Phys. 82 (1997).
22. A.K. Pradhan, B.K. Roul, J.G. Wen, Z.F. Ren, M. Muralidhar, P. Dutta, D.R. Sahu, S. Mohanty, P.K. Patro, Appl. Phys. Lett. 76 (6) (2000).
23. Anil Kumar P.S., Joy P.A., Date S.K. J. Solid State Commun. 108:1998;67.
24. Ju H.L., Gopalkrishnan J., Peng J.L., Li Q., Xiong G.C., Venkatesan T., Green R.L. Phys. Rev. B. 51:1995;6153.