High voltage dual-gate turn-off thyristors

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2001, Pages 1485-1489

  Apeldoorn, Oscar ^a   Steimer, Peter ^a   Streit, Peter ^a   Carroll, Eric ^a   Weber, Andre ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; PLASMA DENSITY; PULSE WIDTH MODULATION; SWITCHING CIRCUITS;

ANODE SIDE GATE; CODUCTION LOSSES; HIGH VOLTAGE DEVICES; INTEGRATED GATE COMMUTATED THYRISTORS; SNUBBERLESS SEMICONDUCTOR SWITCHES; SWITCHING LOSSES;

THYRISTORS;

EID: 0035152531     PISSN: 01972618     EISSN: None     Source Type: Journal    
DOI: 10.1109/IAS.2001.955731     Document Type: Article

References (6)

1. The 10 kV IGCT - a new device for medium voltage drives
2. High-frequency 6000V double gate GTOs
3. Control of plasma dynamics within double-gate-turn-off thyristors (D-GTO)
4. Innovation IGCT main drives
5. New variable speed drive with proven motor friendly performance for medium voltage motors
6. Lifetime engineering for the next generation of application-specific IGCTs