Void induced thermal impedance in power semiconductor modules: Some transient temperature effects

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2001, Pages 1905-1911

  Katsis, D C ^a   Van Wyk, J D ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; HEAT CONDUCTION; MOSFET DEVICES; PERFORMANCE; SEMICONDUCTOR DEVICES; SOLDERING ALLOYS; THERMAL EFFECTS; THERMAL STRESS; THERMAL VARIABLES MEASUREMENT; THERMOANALYSIS;

ACOUSTIC MICROSCOPY; POWER SEMICONDUCTOR MODULES; SOLDER BOND VOIDING; TRANSIENT TEMPERATURE EFFECTS; VOID INDUCED THERMAL IMPEDANCE;

POWER ELECTRONICS;

EID: 0035151987     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. Thermomechatronics of power electronic packages
2. Reliability of solder die attaches for a high power application
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4. Energy based methodology for damage and life prediction of solder joints under thermal cycling
5. Thermal impact of solder voids in the electronic packaging of power devices
6. Direct measurement and analysis of the time dependent evolution of stress in silicon devices and solder interconnections in power assemblies
7. Analysis of thermal transient data with synthesized dynamic models for semiconductor devices
8. A new PSPICE subcircuit for the power MOSFET featuring global temperature options
9. Reliability studies of two flip chip BGA packages using power cycling test
10. Characterisation of die attach for power devices using thermal impedance measurement - Practice and experiment
11. On-line estimation of IGBT junction temperature using on-state voltage drop