Effect of electrical and thermal stress on low-frequency noise characteristics of laser diodes

Microelectronics Reliability

Volumn 41, Issue 1, 2001, Pages 105-110

  Chen, X Y ^a   Pedersen, A ^a   Van Rheenen, A D ^a  

^a UNIVERSITY OF TROMSØ   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; SEMICONDUCTING INDIUM COMPOUNDS; SENSITIVITY ANALYSIS; SPURIOUS SIGNAL NOISE; THERMAL STRESS;

LOW-FREQUENCY NOISES;

QUANTUM WELL LASERS;

EID: 0035151560     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00201-8     Document Type: Article

References (18)

1. Fukuda M., Hirono T., Kurosakiand T., Kano F. Correlation between. 1/f noise and semiconductor laser degradation Qual Reliab Engin Inter. 10:1994;351-353.
2. Shi J.W., Jin E.S., Ma J. An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers. Microelectron Reliab. 34:1994;1261-1264.
3. Vandamme L.K.J., Alabedra R., Zommiti M. 1/f noise as a reliability estimation for solar cells Solid-State Electron. 26:1983;671-674.
4. Zhao X., Deen M.J., Tarof L. Low frequency noise in separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes. Electron Lett. 32:1996;250-252.
5. Ohshima T., Tsuji K., Samshima K., Hirai T., Shidara K., Taketoshi K. Excess noise in amorphous selenium avalanche photodiodes. Jpn J Appl Phys. 30:1991;L1071-L1074.
6. Yamashita S., Ohishi A., Kajimura T., Inoue M., Fukui Y. Low-noise AlGaAs lasers grown by organo-metallic vapor phase epitaxy. IEEE J Quant Electron. 25:1989;1483-1488.
7. Yamamoto Y. AM and FM quantum noise in semiconductor lasers - part I theoretical analysis. IEEE J Quant Electron. QE-19:1983;34-55.
8. Ohtsu M., Kotajima S. Derivation of the spectral width of a 0.8 μm AlGaAs laser considering. 1/f noise Jpn Appl Phys. 23:1984;760-764.
9. Andrekson P.A., Andersson P., Alping A., Eng S.T. In situ characterization of laser diodes from wide-band electrical noise measurement. J Lightwave Technol. LT-4:1986;804-809.
10. Hooge F.N. 1/f noise sources IEEE Trans Electron Dev. 41:1994;1926-1935.
11. Kleinpenning T.G.M. 1/f noise in p-n junction diodes Physica B. 98:1980;289-299.
12. Fukuda M., Hirono T., Kurosaki T., Kano F. 1/f noise behavior in semiconductor-laser degradation IEEE Photon Tech Lett. 5:1993;1165-1167.
13. van der Ziel A. The surface recombination model of p-n diode flicker noise. Physica. 48:1970;242-246.
14. Claeys C., Simoen E. Noise as a diagnostic tool for semiconductor material and device characterization. J Electrochem Soc. 145:1998;2058-2067.
15. + p junction diodes. Appl Phys Lett. 66:1995;2507-2509.
16. Jang S.L., Wu J.Y. Low-frequency current and intensity noise in AlGaAs laser diodes. Solid-State Electron. 36:1993;189-196.
17. Fantini F. Reliability of compound semiconductor devices. Proc 2nd European Rel Phys Conf, vol. 1, 1991. p. 359-7.
18. Chen X.Y., de Folter L.C. Annealing of proton-damaged GaAs and. 1/f noise Semicond Sci Technol. 12:1997;1195-1201.