Abnormal failure mechanism of the asymmetrical emitter turn-off thyristor in high-frequency converters

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2001, Pages 1504-1509

  Xu, Zhenxue ^a   Motto, Kevin ^a,b   Huang, Alex Q ^a  

^a State University   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; FAILURE ANALYSIS; MOSFET DEVICES; PERFORMANCE; POWER CONVERTERS; POWER ELECTRONICS; SWITCHING CIRCUITS; VOLTAGE CONTROL;

EMITTER TURN OFF THYRISTOR; HIGH FREQUENCY CONVERTERS; PARASITIC DIODE;

THYRISTORS;

EID: 0035149017     PISSN: 01972618     EISSN: None     Source Type: Journal    
DOI: 10.1109/IAS.2001.955734     Document Type: Article

References (10)

1. Introducing the emitter turn-off thyristor (ETO)
2. High power snubberless switching with the emitter turn-off thyristor (ETO)
3. Performance characterization of 1-kA/4.5-kV symmetrical emitter turn-off thyristor (ETO)
4. High frequency operation of a megawatt voltage source inverter equipped with ETOs
5. Application of high-power snubberless semiconductor switches in high-frequency PWM converters
6. Low switching loss, high power gate turn-off thyristors (GTOs) with N-buffer and new anode short structure
7. 8000-V 1000-A gate turn-off thyristor with low on-state voltage and low switching loss
8. Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)
9. IGCT-a new emerging technology for high power, low cost inverters
10. MTO™ thyristor: An efficient replacement for the standard GTO