Ultimate parameters of Hg1-xCdxTe and InAs1-xSbx n+-p photodiodes

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 41-46

  Niedziela, T ^a   Ciupa, R ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; MERCURY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; STATISTICAL METHODS; THERMODYNAMIC STABILITY;

AUGER PHOTODIODES;

PHOTODIODES;

EID: 0035148191     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00176-3     Document Type: Article

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