Growth and characterization of cubic-CdS layers on (1 0 0) GaAs in metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 222, Issue 3, 2001, Pages 477-481

  Yasuda, K ^a   Samion, H B ^a   Miyata, M ^a   Araki, N ^a   Masuda, Y ^a   Tomita, Y ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CRYSTAL ORIENTATION; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

HEXAGONAL MODIFICATION; LOW-PRESSURE METALLORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0035148167     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00956-8     Document Type: Article

References (4)

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3. Igarashi O. J. Crystal Growth. 186:1998;344.
4. Bhargava R.N. J. Crystal Growth. 59:1982;15.