Conductivity in boron-doped diamond

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 3, 2001, Pages

  Mamin, Rinat F ^a,b   Inushima, Takashi ^a  

^a TOKAI UNIVERSITY   (Japan)

^b ZAVOISKY PHYSICAL TECHNICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIAMOND;

ARTICLE; CONCENTRATION (PARAMETERS); MODEL; TEMPERATURE DEPENDENCE; TEMPERATURE SENSITIVITY; THERMAL CONDUCTIVITY;

EID: 0035133395     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.033201     Document Type: Article

References (16)

1. H. Fritzsche, Phys. Rev., 99, 406 (1955).
2. N.F. Mott and W.D. Twose, Adv. Phys., 10, 107 (1961).
3. N. F. Mott, Conduction in Non-Crystalline Materials (Clarendon Press, Oxford, 1987).
4. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
5. A. Miller and E. Abraham, Phys. Rev., 120, 745 (1960).
6. N.F. Mott, Philos. Mag., 19, 835 (1969).
7. H. Nishimura, Phys. Rev., 138, A815 (1965).
8. T. Nishimatsu, H. Katayama-Yoshida, and N. Orita, in Proceeding of the 24th International Conference on the Physics of Semiconductors, 1998, Jerusalem, Israel, edited by D. Gershoni (World Scientific, Singapore, 1999), p. 201.
9. S.D. Smith and W. Taylor, Proc. Phys. Soc. London, 79, 1142 (1961).
10. A.W.S. Williams, E.C. Lightowlers, and A.T. Collins, J. Phys. C, 3, 1727 (1970).
11. A.T. Collins and A.W.S. Williams, J. Phys. C, 4, 1789 (1971).
12. B. Massarani, J.C. Bourgoin, and R.M. Chrenko, Phys. Rev. B, 17, 1758 (1978).
13. A. Ogasawara et al.: Diamond Relat. Mater., 6, 835 (1997).
14. J.W. Glesener, Appl. Phys. Lett., 64, 217 (1994).
15. M. Werner et al.: Phys. Status Solidi A, 154, 385 (1996).
16. T. Inushima et al.: Diamond Relat. Mater., 9, 1066 (2000).